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| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200528101256 | GeTe晶体 | 大于20平方毫米 | -- | 5120元 | 咨询客服 | 3天 |
| JD200528101204 | GeTe晶体 | 大于10平方毫米 | -- | 3120元 | 咨询客服 | 3天 |
| 性状： | 材料名称 Name
性质分类 Electrical properties 拓扑材料，相变材料
Bangap 0.5 eV 合成方法 Synthetic method CVT 剥离难易程度 Degree of difficulty for exfoliation Medium 剥离难易程度 Degree of difficulty for exfoliation |
| 质量标准： | 参考文献： 1，Nonaka, Toshihisa, et al. "Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase." Thin Solid Films 370.1-2 (2000): 258-261. 2，Wiedemeier, Heribert, Eugene A. Irene, and Asim K. Chaudhuri. "Crystal growth by vapor transport of GeSe, GeSe2, and GeTe and transport mechanism and morphology of GeTe." Journal of Crystal Growth 13 (1972): 393-396. 3，Seddon, T., J. M. Farley, and G. A. Saunders. "An acoustic anomaly at the phase transition in GeTe SnTe alloy single crystals." Solid State Communications 17.1 (1975): 55-57. |
