4007787550
|
 |
||||||||||||||
| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200528104035 | InBi晶体 | 大于25平方毫米 | -- | 5120元 | 咨询客服 | 3天 |
| JD200528103950 | InBi晶体 | 大于10平方毫米 | -- | 3120元 | 咨询客服 | 3天 |
| 性状： | 材料名称 Name InBi 性质分类 Electrical properties
Topological Insulators Bangap 0 eV 合成方法 Synthetic method CVT 剥离难易程度 Degree of difficulty for exfoliation 中 Medium |
| 质量标准： | 参考文献 Degtyareva, V. F., M. Winzenick, and W. B. Holzapfel. "Crystal structure of InBi under pressure up to 75 GPa." Physical Review B 57.9 (1998): 4975. Akgöz, Y. C., J. M. Farley, and G. A. Saunders. "The elastic behaviour of InBi single crystals." Journal of Physics and Chemistry of Solids 34.2 (1973): 141-149. Bhatt, V. P., and C. F. Desai. "Temperature dependence of vickers microhardness and creep of InBi single crystals." Bulletin of Materials Science 4.1 (1982): 23-28. |
