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| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200529092420 | PbBi6Te10晶体 | 大于25毫克 | -- | 5120元 | 咨询客服 | 3天 |
| JD200529092343 | PbBi6Te10晶体 | 大于10毫克 | -- | 3120元 | 咨询客服 | 3天 |
| 性状： | 材料名称 Name PbBi6Te10 性质分类 Electrical properties 拓扑绝缘体，红外材料，热电材料 Topological Insulators Bangap 0.319 eV 合成方法 Synthetic method CVT 剥离难易程度 Degree of difficulty for exfoliation
Easy |
| 质量标准： | 参考文献 1，Pacile, D., et al. "Deep insight into the electronic structure of ternary topological insulators: A comparative study of PbBi4Te7 and PbBi6Te10." physica status solidi (RRL)–Rapid Research Letters 12.12 (2018): 1800341. 2，Pacile, D., et al. "Deep insight into the electronic structure of ternary topological insulators: A comparative study of PbBi4Te7 and PbBi6Te10." physica status solidi (RRL)–Rapid Research Letters 12.12 (2018): 1800341. 3，Zemskov, V. S., et al. "Thermoelectric materials based on anion-substituted solid solutions in the Pb, Bi‖ Se, Te ternary reciprocal system." Inorganic Materials: Applied Research 4.2 (2013): 77-84 |
