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| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200601115920 | SnS2 二硫化锡 | 超 高纯 | 1g | 2000元 | 咨询客服 | 3天 |
| JD200601115908 | SnS2 二硫化锡 货 | 高纯 | 1g | 1000元 | 咨询客服 | 3天 |
| 性状： | 晶体大小： 5~10 mm 晶体种类： Semiconductor，拓扑材料 纯度： >99.999 % 表征方法： EDS，SEM，Raman 禁带宽度： 1.44eV 注意事项： 晶体稳定，不需要特殊保存 |
| 质量标准： | 参考文献 1， Liu, Yuhan, et al. "Confining SnS2 ultrathin nanosheets in hollow carbon nanostructures for efficient capacitive sodium storage." Joule 2.4 (2018): 725-735. 2， Zhou, Xing, et al. "Tunneling diode based on WSe2/SnS2 heterostructure incorporating high detectivity and responsivity." Advanced Materials 30.7 (2018): 1703286. 3，Meng, Linxing, et al. "Doping‐Induced Amorphization, Vacancy, and Gradient Energy Band in SnS2 Nanosheet Arrays for Improved Photoelectrochemical Water Splitting." Angewandte Chemie International Edition 58.20 (2019): 6761-6765. 4，Shi, Xiao, et al. "Metallic‐State SnS2 Nanosheets with Expanded Lattice Spacing for High‐Performance Sodium‐Ion Batteries." ChemSusChem 12.17 (2019): 4046-4053. |
