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货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
JD200601130353 | SnSe2 二硒化锡 | 高纯 | 1g | 1000元 | 咨询客服 | 3天 |
JD200601130353 | SnSe2 二硒化锡 | 高纯 | 1g | 1000元 | 咨询客服 | 3天 |
性状: | 晶体大小: 5~10 mm 晶体种类: 半导体,红外半导体,热电材料,拓扑材料 纯度: >99.999 % 表征方法: EDS,SEM,Raman 禁带宽度: 0.7eV 剥离难度: 容易 |
质量标准: | 参考文献 1, Zhou, Xing, et al. "Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors." 2D Materials 4.2 (2017): 025048. 2,Gonzalez, Joseph M., and Ivan I. Oleynik. "Layer-dependent properties of SnS 2 and SnSe 2 two-dimensional materials." Physical Review B 94.12 (2016): 125443. 3,Li, Guanpeng, Guangqian Ding, and Guoying Gao. "Thermoelectric properties of SnSe2 monolayer." Journal of Physics: Condensed Matter 29.1 (2016): 015001. 4,Zhang, Fan, et al. "SnSe2 2D anodes for advanced sodium ion batteries." Advanced Energy Materials 6.22 (2016): 1601188. |