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货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
JD200601130812 | TaSe2 二硒化钽 | 超高纯 | 1g | 2000元 | 咨询客服 | 3天 |
JD200601130655 | TaSe2 二硒化钽 | 高纯 | 1g | 1000元 | 咨询客服 | 3天 |
性状: | 晶体种类: 金属性, 超导材料,红外材料。拓扑材料 纯度: >99.999 % 表征方法: EDS,SEM,Raman bandgap: 0 eV 保存方法: 注意防氧化 |
质量标准: | 参考文献 1, Ryu, Hyejin, et al. "Persistent charge-density-wave order in single-layer TaSe2." Nano letters 18.2 (2018): 689-694. 2,Chowdhury, Sugata, et al. "Rearrangement of the Cation (Ta) of 2H-TaSe 2 in the Charge Density Wave Phase (CDW): A DFT Study." Bulletin of the American Physical Society 63 (2018). 3,Wu, Yueshen, et al. "Dimensional reduction and ionic gating induced enhancement of superconductivity in atomically thin crystals of 2H-TaSe2." Nanotechnology 30.3 (2018): 035702. 4,Wang, Jin, et al. "Tunable 2H–TaSe2 room-temperature terahertz photodetector." Chinese Physics B 28.4 (2019): 046802. |