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| 货号 | 品名 | 规格 | 包装 | 单价 | 货期 | 库存 |
| JD200602084935 | MoO3 晶体 | 大于10平方毫米 | 1片装 | 0元 | 咨询客服 | 3天 |
| 性状： | 材料名称 Name MoO3 性质分类 Electrical properties 层状氧化物 禁带宽度 Bangap 0 eV 合成方法 Synthetic method CVT 晶体结构 Crystal Structure
Degree of difficulty for exfoliation 容易 |
| 质量标准： | 参考文献 1， Das, Tilak, Sergio Tosoni, and Gianfranco Pacchioni. "Structural and electronic properties of bulk and ultrathin layers of V2O5 and MoO3." Computational Materials Science 163 (2019): 230-240. 2，Dang, Yang, et al. "Solution processed hybrid Graphene-MoO3 hole transport layers for improved performance of organic solar cells." Organic Electronics 67 (2019): 95-100. 3，Li, Yungui, et al. "Ultrathin MoO3 Layers in Composite Metal Electrodes: Improved Optics Allow Highly Efficient Organic Light‐Emitting Diodes." Advanced Optical Materials 7.3 (2019): 1801262. |
